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利用等离子体增强化学气相沉积法制备了氢化非晶硅/二氧化硅多层膜,通过两步热退火的方法获得了尺寸可控的纳米硅/二氧化硅多层结构,晶粒尺寸约为4nm,在室温下观察到了较强的光致可见发光,其发光峰位于750nm.在此基础上,发现合适的氢气氛退火能有效地提高材料的发光强度.电子顺磁共振实验表明氢气氛退火有效地降低了纳米硅中的非辐射复合中心而导致发光效率的提高.
Hydrogenated amorphous silicon / silicon dioxide multilayer films were prepared by plasma-enhanced chemical vapor deposition. The size-controlled nano-silicon / silicon dioxide multilayer structure was obtained by a two-step thermal annealing method with a grain size of about 4nm, a strong photoluminescence was observed at room temperature, and its emission peak was at 750nm. On this basis, it was found that suitable hydrogen annealing could effectively improve the luminescence intensity of the material. Electron paramagnetic resonance experiments showed that hydrogen atmosphere annealing Which effectively reduces the non-radiative recombination centers in the nanosilica and leads to the improvement of luminous efficiency.