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日本武藏野通讯研究所研制了一种新的器件隔离方法,叫做LOPAS(Lift-Off Pattering Of Sputtered SiO_2 Films)它正在解决着过去的LOCOS法存在的许多问题,如改善窄沟道效应和缩短工艺流程等。最近,为了使LOPAS适用于微细器件的制作,推进溅射SiO_2膜的平坦化方法的研究,又考察了采用离子铣技术的隐埋形LOPAS方法,并于8月举行的电气通信学会半导体晶体管研究会上发表了其研究成果。
Japan's Musashino Telecommunications Research Institute has developed a new device isolation method, called LOPAS (Lift-Off Pattering Of Sputtered SiO_2 Films) which is addressing the many problems of the past LOCOS method, such as improving the narrow channel effect and shorten the process Process and so on. Recently, in order to make LOPAS suitable for the fabrication of fine devices, the research on the planarization method of the sputtered SiO 2 film was promoted, and the LOPAS method using the ion milling technique was also examined, and the Institute of Electrical and Electronics Engineers Semiconductor Transistor Research At the meeting published its research results.