将 Zr O2 和 PZT的 sol- gel薄膜制备技术应用到非破坏性读出铁电存储器中 ,制作出应用 Al/ PZT/ Zr O2 / p- Si结构的 MFIS电容和单管 MFIS FET,研究了 MFIS电容的界面和存储窗口特性 ,结果表明 Zr O2 介质阻挡层和 Si衬底以及 PZT的附着良好 ,在± 5 V测试电压、1MHz测试频率下 ,存储窗口电压为 2 .6 V左右 ,与相应的铁电薄膜的正、负矫顽电压差值的比为 0 .8.对于宽长比为 5 0 0μm / 5 0μm器件 ,采用栅极与源极、漏极写入方式 ,± 10 V时在写入电压下得到理想的输入 -输出特性 ;小尺寸的 4 0μm/ 8μm器件在± 5 V写入电压下特性较好 The application of the sol-gel thin film preparation technology of Zr O2 and PZT to non-destructive readout ferroelectric memory made MFIS capacitor and single-tube MFIS FET with Al / PZT / Zr O2 / p-Si structure. MFIS Capacitance and interface characteristics of the storage window. The results show that the ZrO2 dielectric barrier is well attached to the Si substrate and the PZT. The storage window voltage is about 2.6 V at ± 5 V test voltage and 1 MHz test frequency, The ratio of the positive and negative coercive voltage difference of the ferroelectric thin film is 0.8. For the device with a width to length ratio of 500μm / 500μm, the gate and source, the drain writing mode, Write voltage to get the ideal input-output characteristics; small size 4 0μm / 8μm device at ± 5 V write voltage characteristics better