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应用同步辐射 (hν =10 0eV)和XPS研究了稀土金属Gd室温下在清洁的Ni(110 )表面上的生长过程 .发现了随着Gd膜厚度的增加 ,Gd(4f)谱带由位于 8 5eV的单峰向位于 8 5和 10 8eV的双峰结构转变 .Gd(4d)峰亦有类似的结果 .该表面在 6 0 0K高温退火引起了Gd 4f和 4d双峰中的高结合能峰的强烈衰减和消失 .对室温下Gd在Ni(110 )面上的生长模式及在高覆盖度时生成的Gd 4f和 4d高结合能峰的本质进行了讨论 .
The growth of rare earth metal Gd on clean Ni (110) surface at room temperature was studied by using synchrotron radiation (hν = 100eV) and XPS. It was found that the Gd (4f) A single peak at 5eV transitions to a bimodal structure located at 85 and 108eV. Similar results were observed for the Gd (4d) peak, which was annealed at 600K, causing a high binding energy peak in the doublet of Gd 4f and 4d The decay and disappearance of Gd at room temperature are discussed.The growth pattern of Gd at Ni (110) surface at room temperature and the nature of the high binding energy peaks of Gd 4f and 4d formed at high coverage are discussed.