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基于异质结双极晶体管(HBT)优良的微波特性,精确建模对使用该类器件进行电路设计具有重要的意义。介绍了HBT所具有的独特优越性,采用Gummel-Poon等效电路模型对常用HBT进行了小信号和大信号模型的建立,加入了寄生电感等效衬底寄生参数,测试了SiGe HBT在不同偏置下的S参数及I-V特性曲线,利用半解析方法分析了非线性模型的参数提取,讨论了本征参数和寄生参数的拟合优化。给出了关于HBT大信号和小信号等效电路模型,对比实测参数进行验证,建立模型在测试频率范围内拟合结果和测试结果吻合良好。
Based on the excellent microwave characteristics of heterojunction bipolar transistors (HBTs), accurate modeling is of great importance for circuit design using such devices. The unique superiority of HBT is introduced. The small-signal and large-signal model of common HBT are established by Gummel-Poon equivalent circuit model. The equivalent parasitic inductance of parasitic inductance is added to test the effect of SiGe HBT on different partial The S parameter and IV characteristic curve were set. The semi-analytical method was used to analyze the parameter extraction of nonlinear model. The fitting optimization of intrinsic parameter and parasitic parameter was discussed. The equivalent circuit model of large signal and small signal of HBT is given. The measured parameters are compared with the actual measured data. The fitting results are in good agreement with the test results in the test frequency range.