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过渡金属硫族化合物(TMD)因其原子层级的厚度和独特的光电性能而受到了广泛的关注和研究。大量文章报道了TMD的可控制备、奇特的光电性能及其在光探测、发光、自旋和能谷电子学等光电子领域的应用。从TMD的材料制备、光电性能及光电应用三个角度对这些工作进行了总结。
Transition metal chalcogenide (TMD) has received extensive attention and research due to its atomic layer thickness and unique photoelectric properties. A large number of articles reported TMD controllable preparation, peculiar optoelectronic properties and its application in optoelectronics such as light detection, luminescence, spin and valley energy electronics. The work is summarized from three aspects of material preparation, optoelectronic properties and optoelectronic applications of TMD.