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本文研究了乳酸(HL)体系抛光液中金属锇的化学机械抛光(CMP)行为,采用电化学分析方法和X射线光电子能谱仪(XPS)分析氧化剂和腐蚀抑制剂的作用机理,利用原子力显微镜(AFM)观察抛光前后锇的表面形貌.结果表明,当抛光液仅含有H2O2时,金属锇表面腐蚀不明显;在一定浓度范围内H2O2浓度的增加可以提高金属锇表面的腐蚀速度,但是不利于金属锇表面钝化膜的形成.当抛光条件为:压力为6.895 kPa,转速为50 r/min,抛光液流量为50 mL/min,pH值为5.0;抛光液组成为:SiO2质量分数为1%,HL质量分数为1%,H2O2质量分数为3%时,得到最大去除速率为23.34 nm/min,表面粗糙度Ra为6.3 nm,而将缓蚀剂BTA加入到抛光液后,在同样的抛光条件下得到的锇表面粗糙度更低,表面粗糙度Ra达到2.1 nm.
In this paper, the chemical mechanical polishing (CMP) behavior of osmium metal in the polishing solution of lactic acid (HL) system was studied. The mechanism of action of oxidant and corrosion inhibitor was analyzed by electrochemical analysis and X-ray photoelectron spectroscopy (XPS) (AFM) was used to observe the surface morphology of osmium before and after polishing.The results showed that when the polishing solution contained only H2O2, the surface corrosion of osmium was insignificant, and the increase of H2O2 concentration could increase the corrosion rate of osmium on the surface of metal, but not Which is conducive to the formation of metal osmium surface passivation film.When the polishing conditions are as follows: the pressure is 6.895 kPa, the rotation speed is 50 r / min, the polishing liquid flow rate is 50 mL / min, the pH value is 5.0; 1%, HL mass fraction of 1%, H2O2 mass fraction of 3%, the maximum removal rate of 23.34 nm / min, the surface roughness Ra of 6.3 nm, and the inhibitor BTA added to the polishing liquid, the same Osmium obtained under the polishing conditions has a lower surface roughness and a surface roughness Ra of 2.1 nm.