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随着半导体技术的进步,集成小尺寸绝缘体上硅器件的芯片开始应用到航空航天领域,使得器件在使用中面临了深空辐射环境与自身常规可靠性的双重挑战.进行小尺寸器件电离辐射环境下的可靠性试验有助于对器件综合可靠性进行评估.参照国标GB2689.1-81恒定应力寿命试验与加速寿命试验方法总则进行电应力选取,对部分耗尽绝缘体上硅n型金属氧化物半导体场效应晶体管进行了电离辐射环境下的常规可靠性研究.通过试验对比,定性地分析了氧化物陷阱电荷和界面态对器件敏感参数的影响,得出了氧化物陷阱电荷和界面态随着时间参数的变化,在不同阶段对器件参数的影响.结果表明,总剂量效应与电应力的共同作用将加剧器件敏感参数的退化,二者的共同作用远大于单一影响因子.
With the advancement of semiconductor technology, the integrated chip with silicon devices of small size has been applied to the field of aerospace, making the device face the dual challenges of deep space radiation environment and its own regular reliability in use. Under the reliability test contribute to the overall reliability of the device to evaluate.Refer to the national standard GB2689.1-81 constant stress life test and accelerated life test method for the general electrical stress selection, the partial depletion of the on insulator silicon n-type metal oxide Semiconductor field-effect transistors have been studied under the condition of ionizing radiation.The influence of oxide trap charge and interface state on the sensitive parameters of the device has been qualitatively analyzed through experimental comparison, and the results show that the oxide trap charge and interface states vary with The time parameter changes and the influence on the device parameters in different stages.The results show that the combined effect of the total dose effect and the electrical stress will exacerbate the degradation of the sensitive parameters of the device and their mutual effect is much larger than the single influence factor.