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对超大规模集成电路制备中二氧化硅介质的抛光机理、工艺条件的选择进行了大量理论和实验研究 ,着重研究了使用化学方法提高抛光速率、改善表面状况以及如何解决抛光浆料的沉积等问题 ,并实现了技术突破。
A large number of theoretical and experimental studies have been conducted on the selection of the polishing mechanism and the process conditions of the silica medium in the preparation of a very large scale integrated circuit. Emphasis has been placed on the use of chemical methods to increase the polishing rate, improve the surface condition, and how to deal with the deposition of the polishing slurry , And achieved a technological breakthrough.