一、概况: 这里介绍的是一台1970年开始研制的MOS和双极性混合使用的高速缓冲存贮器,其读写同期T≤250ns,容量为512,字长48位,存贮单元用Mos集成电路,而读写驱动等外围电路则采用双极型集成电路。我们用的Mos存贮元件是上无十四厂生产的静态P沟铝栅增强型,集成 First, an overview: Here is introduced in 1970 developed a MOS and bipolar mixed use of the cache, the reading and writing the same period T ≤ 250ns, the capacity of 512, the word length 48, the storage unit with Mos integrated circuits, and read-write drivers and other peripheral circuits using bipolar integrated circuits. The Mos storage element we use is a static P-type aluminum grille enhanced on an integrated Fourteenth Factory that integrates