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Using depletion approximation theory and introducing acceptor defects which can characterize radiation induced deep-level defects in AlGaN/GaN heterostructures,we set up a radiation damage model of AlGaN/GaN high electron mobility transistor(HEMT) to separately simulate the effects of several main radiation damage mechanisms and the complete radiation damage effect simultaneously considering the degradation in mobility.Our calculated results,consistent with the experimental results,indicate that thin AlGaN barrier layer,high Al content and high doping concentration are favourable for restraining the shifts of threshold voltage in the AlGaN/GaN HEMT;when the acceptor concentration induced is less than 1014cm-3,the shifts in threshold voltage are not obvious;only when the acceptor concentration induced is higher than 1016 cm-3,will the shifts of threshold voltage remarkably increase;the increase of threshold voltage,resulting from radiation induced acceptor,mainly contributes to the degradation in drain saturation current of the current-voltage(I-V) characteristic,but has no effect on the transconductance in the saturation area.
Using depletion approximation theory and introducing acceptor defects which can characterize radiation induced deep-level defects in AlGaN / GaN heterostructures, we set up a radiation damage model of AlGaN / GaN high electron mobility transistor (HEMT) to separately simulate the effects of several main radiation damage mechanisms and the complete radiation damage effect simultaneously on the degradation in mobility. Our calculated results, consistent with the experimental results, indicate that thin AlGaN barrier layer, high Al content and high doping concentration are favourable for restraining the shifts of threshold voltage in the When the acceptor concentration is less than 1014 cm-3, the shifts in the threshold voltage are not obvious; only when the acceptor concentration is higher than 1016 cm-3, the shifts of the threshold voltage remarkably increase; the increase of threshold voltage, resulting from radiation induced acceptor, mainly contributes to the degr adation in drain saturation current of the current-voltage (I-V) characteristic, but has no effect on the transconductance in the saturation area.