采用聚焦离子束制备了500nm和1.5μm周期两种结构,使GaN基LED光效显著提高。比较长、短周期光子晶体提高光效的程度、制备工艺、设备及其相应的成本,宜采用长周期光子晶体结构来提高蓝光GaN基LED的发光效率。采用聚焦离子束和激光干涉两种方法,在GaN基LED导电层(ITO)上制备了长周期光子晶体,利用光纤光谱仪、显微镜和功率计对光提取效率进行了实验测试,结果表明长周期光子晶体LED比无光子晶体LED的光提取效率提高了90%以上。还采用激光干涉直写方法,以扫描的方式在较大面积上制备了光子晶体LED,确认了该方法及工艺批量化、低成本制备光子晶体的可行性。聚焦离子束方法虽然能够产生较精确的光子晶体图形,但由于耗时长、效率低、成本高等问题,仅适于在实验研究中选择和优化光子晶体的结构和参数。 Two kinds of structures of 500nm and 1.5μm period were fabricated by focused ion beam, which made the light efficiency of GaN-based LED significantly improve. Long, short-period photonic crystal to improve the efficiency of the light, the preparation process, equipment and the corresponding cost, should adopt long-period photonic crystal structure to improve the blue light-emitting GaN-based LED luminous efficiency. Long-period photonic crystals were prepared on GaN-based LED conductive layer (ITO) by focused ion beam and laser interference. The light extraction efficiency was experimentally tested by fiber spectrometer, microscope and power meter. The results show that long period photons Crystal LED photonic crystal photonic than non-photonic crystal extraction efficiency increased by more than 90%. The method of direct laser interference writing was also adopted to fabricate photonic crystal LEDs on a large area by means of scanning. The feasibility of the method and the process of batch and low cost photonic crystal production was confirmed. Although focused ion beam method can produce more accurate photonic crystal patterns, it is only suitable for the selection and optimization of the structure and parameters of photonic crystals in experimental studies because of the long time, low efficiency and high cost.