论文部分内容阅读
采用磁增强活性反应离子镀系统成功地合成了立方氮化硼薄膜 .通过给基片施加脉冲直流偏压以代替传统的射频偏压 ,增强了立方氮化硼的成膜稳定性 ,研究了基片的直流脉冲偏压、等离子体放电电流、通入气体流量比 (Ar N2 )和基片温度沉积参数对立方氮化硼薄膜形成的影响规律 .结果表明 :随着基片负偏压和放电电流的增大 ,薄膜中立方氮化硼的纯度提高 ,当基片负偏压为 15 5V ,放电电流为 15A时 ,可获得几乎单相的立方氮化硼薄膜 .基片温度为 5 0 0℃和Ar N2 流量比为 10时 ,最有利于立方氮化硼的形成 .偏离这个值 ,都会促进薄膜中非立方相的形成 .
The cubic boron nitride thin films were successfully synthesized by magnetically enhanced reactive ion plating system.By applying a pulsed DC bias to the substrate instead of the traditional RF bias to enhance the film formation stability of cubic boron nitride, The influence of DC bias voltage, plasma discharge current, Ar N2 flow rate and substrate temperature deposition parameters on the formation of cubic boron nitride thin films was investigated.The results show that with the substrate negative bias and discharge With the increase of current, the purity of neutral cubic boron nitride increases. When the negative bias voltage of substrate is 15 5V and the discharge current is 15A, almost single-phase cubic boron nitride film can be obtained. The substrate temperature is 500 ℃ and Ar N2 flow ratio of 10, the most favorable for the formation of cubic boron nitride deviation from this value will promote the formation of non-cubic phase in the film.