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从可靠性物理的角度,深入分析了引起砷化镓微波单片集成电路(GaAsMMIC)退化或失效的主要失效模式及其失效机理,明确了 GaAs MMIC的可靠性问题主要表现为有源器件、无源器件和环境因素等引入损伤退化,主要的失效部位是MMIC的有源器件。
From the perspective of reliability physics, the main failure modes and failure mechanisms of GaAs MMIC degradation or failure are analyzed in depth. The reliability problems of GaAs MMICs are mainly manifested as active devices, Source and environmental factors, such as the introduction of damage degradation, the main failure of MMIC is the active component.