Lu2.1Bi0.9Fe5O12 (LuBiIG) gaet films are prepared by liquid phase epitaxy (LPE) method on gadolinium gallium gaet (GGG) substrates from lead-free flux. Three-inch single crystal gaet films with (444) orientation and good surface are successfully fabricated. The lattice mismatch to the GGG(111) substrate is as small as 0.08%. The ferromagnetic resonance (FMR) linewidth of the film is 2△H = 2.8-5.1 Oe, the Faraday rotation is 1.64 deg/μm at 633nm at room temperature and the optical absorption coefficient of the film is 600 cm-1 in visible range and about 100-170cm-1 when the wavelength is larger than 800nm. The epitaxy film possesses dominating in-plane magnetization with a saturation magnetization of about 1562G. These superior optical, magnetic-optical (MO) and microwave properties of our gaet films have potential applications in both MO and microwave devices.