GDα-Si:H薄膜作为廉价大面积太阳电池的基本材料日益显示出广阔的前景,人们已进行了大量的研究工作。然而对α-Si:H基本性质的许多问题至今尚未解决。由于光致发光谱可以探测α-Si:H的带尾和其他局域态的性质,故对GDα-Si:H薄膜光致发光的研究是当前基础研究的一个重要课题。迄今为止,人们已经发现α-Si:H薄膜有五个发光峰:(1)主发光峰。尽管对 GDα-Si: H thin film as the basic material for large-scale cheap large-scale solar cells has increasingly shown a broad prospect, people have conducted a lot of research work. However, many problems with the basic properties of α-Si: H have not been solved yet. The photoluminescence of GDα-Si: H thin films is an important issue in current basic research because photoluminescence can detect the tail of α-Si: H and the properties of other localized states. So far, it has been found that the α-Si: H thin film has five luminescence peaks: (1) the main luminescence peak. Although right