在沉积肖特基金属之前,对非掺的Al0.45Ga0.55N采用了不同时间的氟基等离子体处理,其中Al组分对应日盲波段。与未做氟基等离子体处理的样品相比,经过处理的Al0.45Ga0.55N肖特基二极管在反向-10V的漏电流密度随处理时间的增加而减少,其中处理1min的样品的漏电流密度减少了5个数量级。X射线光电子谱分析证明了处理过的样品表面Ga-F和Al-F键的形成。反向漏电的减少可能是由氟基等离子体处理耗尽了电子和有效钝化了表面态导致的。 Prior to the deposition of Schottky metal, different times of fluorine-based plasma treatment were applied to the undoped Al0.45Ga0.55N, with the Al component corresponding to the blind day band. The leakage current density of the treated Al0.45Ga0.55N Schottky diode in the reverse direction-10V decreased with the increase of the processing time compared with the sample without the fluorine-based plasma treatment. The leakage current of the sample treated for 1min Decreased density by 5 orders of magnitude. X-ray photoelectron spectroscopy demonstrated the formation of Ga-F and Al-F bonds on the treated sample surface. The reduction of reverse leakage may be caused by the exhaustion of electrons by the fluorine-based plasma treatment and the effective passivation of the surface state.