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本文提出一种新型横向绝缘栅双极晶体管／横向扩散ＭＯＳ混合晶体管（ＬＩＧＢＴ／ＬＤＭＯＳ），在有非平衡电子抽出下截止瞬态响应的电荷控制模型，由考虑非准静态效应的积分式连续性方程，导出双载流子动态电荷控制表示式；计及其中双极晶体管宽漂移区的电导调制效应和瞬态电荷分布效应，利用保角变换求得抽出区导通电阻，从而获得归一化瞬态截止电流和瞬态截止时间及它们与漂移区长度和材料参数，特别是与两器件宽度比的关系，据此，可制作高速开关器件．
In this paper, we propose a new type of LGBT / LDMOS hybrid charge-controlled model with transient response under unbalanced electron extraction, which is composed of integral continuity considering non-quasi-static effect Equation and derive the expression of dynamic charge control of dual carriers. Taking into account the conductance modulation effect and transient charge distribution effect of the wide drift region of the bipolar transistor, the on-resistance of the pull-out region is obtained by using the conformal transformation to obtain the normalization Transient cut-off current and transient cut-off time and their relationship with the drift region length and material parameters, especially with the width ratio of two devices, can make high-speed switching devices.