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蓝宝石是生长GaN材料最常用的衬底，本文研究了H2SO4和H3PO4的混合酸液的温度、混合酸的比例以及腐蚀时间对蓝宝石腐蚀速率的影响．发现在H2SO4：H3PO4=3：1的溶液中的腐蚀速率是由表面化学反应速率所控制．利用X射线双晶衍射对除去蓝宝石表面的机械损伤层情况进行了测量．
Sapphire is the most commonly used substrate for growing GaN materials. In this paper, the effects of mixed acid solution temperature, mixed acid ratio and etching time on the sapphire corrosion rate were studied. The corrosion rate in a solution of H2SO4: H3PO4 = 3: 1 was found to be controlled by the surface chemical reaction rate. X-ray double crystal diffraction was used to measure the mechanical damage of the sapphire surface.