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Usually GaAs/AlGaAs is utilized as an active layer material in laser diodes operating in the spectral range of 800-850 nm.In this work,in addition to a traditional unstrained GaAs/AlGaAs distributed feedback(DFB) laser diode,a compressively strained InGaAlAs/AlGaAs DFB laser diode is numerically investigated in characteristic.The simulation results show that the compressively strained DFB laser diode has a lower transparency carrier density,higher gain,lower Auger recombination rate.and higher stimulated recombination rate.which lead to better a device performance.than the traditional unstrained GaAs/AlGaAs DFB laser diode.