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采用化学气相输运法在常压开放系统中,以ZnO粉体为原料,HCl和NH3为输运气体,O2和H2O为反应气体,适度过量的HCl作为刻蚀性气体,在(0001)方向的蓝宝石籽晶片上制备了(0002)方向定向生长的ZnO晶体,且a、b轴生长速度明显高于c轴方向。以(0002)方向的ZnO籽晶片作基片,制备了ZnO单晶厚膜,晶体呈螺旋状外延生长,正极面的单晶摇摆曲线半高宽为543.6弧秒。
In the atmospheric pressure open system, ZnO powder is used as raw material, HCl and NH3 are transport gases, O2 and H2O are reaction gases, and moderate excess HCl is used as etchant gas in the (0001) direction (0002) oriented ZnO crystals were grown on sapphire seed crystals, and the growth rates of a and b axes were significantly higher than that of c axis. ZnO thin films with (0002) orientation were used as substrates to prepare ZnO single crystal thick films with helical epitaxial growth. The full width at half maximum (FWHM) of the single crystal rocking curve at the positive surface was 543.6 arcseconds.