东京大学生产技术研究所的生驹俊明教授等人利用半导体中深杂质能级,成功地试制了新型红外摄象器件。在硅材料中,通过扩散杂质,形成深杂质能级的肖特基结。其原理是:当红外线激发时,结中深能级所束缚电子的电荷状态变化,用作信号取出。以前只能在可见光领域中才能探测的硅材料,开始用作红外摄象器件。目前,红外摄象器 Professor Juju Jun-ming, a professor of the Institute of Production Technology at the University of Tokyo, succeeded in experimenting with a new type of infrared camera using the deep impurity levels in semiconductors. In silicon materials, Schottky junctions at deep impurity levels are formed by diffusion of impurities. The principle is: when the infrared is excited, the junction of the deep level of electrons bound to the charge state changes for signal removal. Silicon materials, previously only detectable in the field of visible light, began to be used as infrared camera devices. At present, the infrared camera