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评述了垂直腔面发射半导体激光器研究的最新进展，就其结构特点、应变量子阱结构、超晶格镜面和微腔效应作了简要的论述，探讨了进一步降低半导体激光器阈值的途径，介绍了新型的氧化约束型垂直腔面发射半导体激光器，并对微腔激光器中自发辐射增强效应和三维封闭腔的特性给出了描述，同时展望了该器件的应用及发展前景．
The recent developments of vertical cavity surface-emitting semiconductor lasers are reviewed. The structural features, the structure of strained quantum wells, the superlattice mirrors and the effects of microcavities are briefly discussed. The ways to further reduce the threshold of semiconductor lasers are discussed. And the properties of spontaneous emission enhancement in micro-cavity laser and the characteristics of three-dimensional closed cavity are described. The application and development prospect of the device are also prospected.