采用射频分子束外延方法生长了氮化铝薄膜材料,研究了生长条件对外延层中位错和点缺陷等晶体缺陷的影响。结果表明,在富Al条件下,适当提高生长温度有利于抑制位错的产生,但同时会引入更多的氧杂质点缺陷。而对于空位点缺陷,在富Al条件下进行二维生长可同时增强Al和N原子的迁移,因此可有效地减少Al空位和N空位。但是,相比于Al空位,薄膜中的N空位更难以消除。 The AlN films were grown by radio frequency molecular beam epitaxy and the effects of growth conditions on the crystal defects such as dislocations and point defects in the epitaxial layer were investigated. The results show that under the condition of Al-rich, proper increase of the growth temperature is beneficial to suppress dislocation, but at the same time, more defects of oxygen impurities will be introduced. However, for the vacancy defects, the two-dimensional growth under Al-rich condition can enhance the migration of Al and N atoms simultaneously, so the Al vacancy and N vacancy can be effectively reduced. However, N vacancies in the film are more difficult to eliminate than Al vacancies.