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本文主要介绍我们在自己研制的分子束外延(MBE)设备上进行的GaAs单晶薄膜的生长研究。这个工作从1980年开始,在不断改进分子束外延设备和外延生长条件的基础上,使MBEGaAs的性能有了大幅度的提高。
This article focuses on the growth of GaAs single crystal thin films that we have performed on our own molecular beam epitaxy (MBE) equipment. Since 1980, this work has greatly improved the performance of MBEGaAs based on the continuous improvement of molecular beam epitaxy equipment and epitaxial growth conditions.