一、问题的提出 随着半导体器件向着小尺寸,高集成度方向发展,许多新的工艺技术比如电子束曝光、ⅹ-射线曝光、离子注入、射频溅射、等离子体氧化、等离子体刻蚀等等新技术已开始用在半导体器件制造工艺中。这些工艺的共同特点是在过程中应用了某些高能粒子或光子。现已研究表明,暴露在高能电子、光子和离子环境中的SiO_2-Si结构,由于电离辐射,引起SiO_2-Si结构中界面电荷和界面态密度增加。有时 First, the question raised With the development of semiconductor devices toward small size, high integration, many new technologies such as electron beam exposure, ⅹ-ray exposure, ion implantation, RF sputtering, plasma oxidation, plasma etching, etc. And other new technologies have begun to be used in semiconductor device manufacturing process. A common feature of these processes is the application of certain energetic particles or photons in the process. It has been shown that the SiO 2 -Si structure exposed to high-energy electrons, photons and ions has an increased interfacial charge and interface state density in the SiO 2 -Si structure due to ionizing radiation. sometimes