论文部分内容阅读
应用多种光谱手段研究了分子束外延生长在半绝缘的 (0 0 1)GaAs衬底上的低氮含量的GaNAs中三元合金态的光学特性 .变温PL谱揭示了合金态的本征特性以及其与氮的杂质态的根本区别 ,而脉冲激发的光荧光谱则进一步显示了合金态的本征光学特性 .最后还研究了GaNAs的吸收光谱特征 .
The optical properties of the ternary alloying state of GaNAs with low nitrogen content on semi-insulating (0 0 1) GaAs substrates by molecular beam epitaxy have been investigated by a variety of spectroscopic techniques. The variable temperature PL spectra reveal the intrinsic properties of the as-deposited alloy As well as its fundamental difference with the impurity state of nitrogen, while the pulsed excitation fluorescence spectrum further shows the intrinsic optical properties of the alloy state.Finally, the absorption spectra of GaNAs were also studied.