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通过对功率金属氧化物半导体场效应晶体管在静态应力下的负偏置温度不稳定性的实验研究,发现器件参数的退化随时间的关系遵循反应扩散模型所描述的幂函数关系,并且在不同栅压应力下,实验结果中均可观察到平台阶段的出现.基于反应扩散理论的模型进行了仿真研究,通过仿真结果分析和验证了此平台阶段对应于反应平衡阶段,并且解释了栅压应力导致平台阶段持续时间不同的原因.
Through the experimental study on the thermal bias instability of MOSFET under static stress, it is found that the degradation of device parameters with time follow the power function relationship described by reaction diffusion model, Under the compressive stress, the platform stage can be observed in the experimental results.The simulation based on the reaction diffusion theory is carried out. The simulation and simulation results show that the platform stage corresponds to the reaction equilibrium stage and the stress induced by the grid stress The reasons for the different duration of platform stage.