We investigate the structural property and surface morphology of Inx Ga1-xN films for In compositions ranging from 0.06 to 0.58,which are deposited by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD).The results of x-ray diffraction (XRD) in InGaN filns confirm that they have excellent c-axis orientation.The In content in the InGaN epilayers is checked by electron probe microanalysis (EPMA),which reveals that In fractions determined by XRD are in good agreement with the EPMA results.Atomic force microscopy measurements reveal that the grown films have a surface roughness that varies between 4.16 and 8.14nm.The results suggest that it is possible to deposit high-c-axis-orientation InGaN films with different In contents.The InGaN teary alloy is intensively studied and of great interest because its bandgap energy can be continuously varied from the near-infrared region of ～0.7eV (InN) to the near-UV region of ～3.4eV (GaN),[1-4] and it is corrosion resistant.[6] Therefore,InGaN teary alloys,particularly high-quality In-rich InGaN alloys,give potential applications in many crucial fields such as the whole solar spectrum,high efficiency and radiation hard multijunction solar cells,[5] high-brightness nitride green light emitting diodes and laser diodes,[1] and high-quality photoelectrodes for hydrogen production.[6]