《IEEE EDL》1991年11期发表了制造VLSI器件中亚微米尺寸的高表面浓度浅结新形成工艺。它用准分子激光器辐射实现硅中的硼掺杂。该工艺的特点是能精确控制高表面浓度的薄层电阻。 工艺制造采用两步方法。第一步是淀积掺杂源,第二步是掺杂原子的掺入。硅片是电阻率 “IEEE EDL” 1991-11 published a new high-surface-area shallow junction formation process for manufacturing sub-micron sizes in VLSI devices. It excites boron in silicon with excimer laser radiation. The process is characterized by precise control of sheet resistance at high surface concentrations. Process manufacturing using two-step method. The first step is to deposit dopant sources and the second step is to incorporate dopant atoms. Wafer is resistivity