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通过对InxGa1-xAs泊松比的两级优化,讨论了泊松比取值对InxGa1-xAs/GaAs异质结应变层中组分分析的影响。以PB模型计算的临界厚度为指导,设计了一组实验,采用分子束外延(MBE)技术生长不同In组分、不同应变层厚度的InxGa1-xAs/GaAs异质结样品且进行X射线双晶衍射测试,并依据该结果分析应变层组分。对于影响组分分析的泊松比,通过线性内插法将应变层泊松比优化为组分的函数,并分别采用传统的单一值和优化的泊松比分析应变层的组分:泊松比取单一值1/3时,组分偏差高达0.009 1,取优化的泊松比时,偏差仅0.001 5。研究表明,相对于取单一值和线性内插法优化的泊松比,采用线性内插弹性系数优化的泊松比可以更准确地分析异质结应变层的组分。
The influence of Poisson’s ratio on the composition analysis of the InxGa1-xAs / GaAs heterojunction strain-gauge layer is discussed through the two-stage optimization of the InxGa1-xAs Poisson’s ratio. Guided by the critical thickness calculated by the PB model, a series of experiments were designed. The InxGa1-xAs / GaAs heterojunction samples with different In compositions and different strain layers were grown by molecular beam epitaxy (MBE) Diffraction tests were performed and the strained layer composition was analyzed based on this result. For the Poisson’s ratios that affect the component analysis, the Poisson’s ratio of the strained layer is optimized as a function of the composition by linear interpolation, and the components of the strained layer are analyzed respectively using the traditional single value and the optimized Poisson’s ratio: When taking a single value of 1/3, the component deviation is as high as 0.009 1, and when the optimal Poisson’s ratio is taken, the deviation is only 0.001 5. The results show that the Poisson’s ratio optimized by linear interpolation coefficient of elasticity can be used to analyze the composition of the heterojunction strained layer more accurately than the Poisson’s ratio optimized by single value and linear interpolation.