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本文通过测量电导率特性对LPCVD掺氧多晶硅(SIPOS)的电学特性进行了研究。结果表明,SIPOS的电学特性与其含氧量和退火温度有关。SIPOS的含氧量增加,其电导率下降;在退火过程中,随退火温度的不同,SIPOS的电导率的变化存在两个不同过程:低温退火过程中,电导率的变化与SIPOS中的Si-O键的分布和作用有关;而在高温退火过程中,电导率的变化则是SIPOS薄膜再结晶的结果。本文对SIPOS的掺杂效应也进行了研究。结果表明,SIPOS掺杂后电导率明显提高;而含氧量对掺杂后的SIPOS的电导率的提高具有明显的抑制作用。
In this paper, the electrical properties of LPCVD doped polycrystalline silicon (SIPOS) were investigated by measuring the conductivity characteristics. The results show that the electrical properties of SIPOS are related to its oxygen content and annealing temperature. SIPOS oxygen content increases, the conductivity decreased; in the annealing process, with the different annealing temperature, SIPOS conductivity there are two different changes in the process: low temperature annealing, the change in conductivity and SIPOS Si- O bond distribution and the role of; and in the high temperature annealing process, the conductivity change is SIPOS film recrystallization results. The doping effect of SIPOS is also studied in this paper. The results show that the conductivity of SIPOS is obviously increased after doped with SIPOS. However, the oxygen content of SIPOS significantly inhibits the conductivity of SIPOS.