分别采用液相外延瞬态法的两种不同模式——步冷法和超冷法生长了GaAs0.9Sb0.1薄膜。采用X射线衍射谱、扫描电镜、拉曼光谱仪研究了GaAs0.9Sb0.1薄膜的晶体结构、截面形貌和发光性能等。研究结果表明:与超冷法相比,步冷法生长外延薄膜的速率更加缓慢,但薄膜晶体结构的质量更高、界面更平滑;两种不同液相外延模式生长的GaAs0.9Sb0.1薄膜的光致发光性能差别不大。 GaAs0.9Sb0.1 thin films were grown by two different modes of liquid-phase epitaxy: step-cooling and super-cooling respectively. The crystal structure, cross-sectional morphology and luminescent properties of GaAs0.9Sb0.1 thin films were investigated by X-ray diffraction, scanning electron microscopy and Raman spectroscopy. The results show that compared with the super-cooling method, the growth rate of the epitaxial thin film by the step cooling method is more slow, but the quality of the thin film crystal structure is higher and the interface is smoother. Two GaAs0.9Sb0.1 thin films grown by liquid-phase epitaxy Photoluminescence performance is not very different.