用来制作光电子器件的(Al_(0.1)Ga_(0.9))_(0.5)In_(0.5)为直接带隙的四元合金材料,对应的发光波长为630nm,在其LP-MOCVD(low press-metalorganic chemical vapor deposition)外延生长过程中温度的高低成为影响其质量的关键,找到合适的生长温度窗口很有必要.实验中分别在700C,680C,670C和660C的条件下生长出作为发光二极管有源区的(Al_(0.1)Ga_(0.9))_(0.5)In_(0.5)多量子阱结构,通过PL谱的测试对比分析,找出最佳生长温度在670C附近.之后对比各外延片的PL谱、表面形貌,并对反应室的气流场进行了模拟,对各温度下生长状况的原因作出了深入分析.分析得到,高温下In组分的再蒸发会引起晶格失配并导致位错;低温下O杂质的并入会形成大量非辐射复合中心影响晶体质量,因此导致了(Al_(0.1)Ga_(0.9))_(0.5)In_(0.5)生长温度窗口较窄,文章最后提出In源有效浓度的提高是解决高温生长的一条有效途径. (Al_ (0.1) Ga_ (0.9)) _ (0.5) In_ (0.5) is a direct bandgap quaternary alloy material for the fabrication of optoelectronic devices with a corresponding emission wavelength of 630 nm. In its LP-MOCVD (low press- metalorganic chemical vapor deposition.It is necessary to find a suitable growth temperature window in the process of epitaxial growth.According to the results of the experiment, 700W, 680C, 670C and 660C, respectively, were grown as light-emitting diode active (0.5) In_ (0.5) MQW structure of (Al_ (0.1) Ga_ (0.9)) _ (0.5) In the PL spectrum, we found that the optimum growth temperature is around 670 C. After comparing the PL Spectrum and surface topography of the reaction chamber were simulated and the gas field in the reaction chamber was simulated and the reason of the growth condition at each temperature was analyzed.The results show that the re-evaporation of the In component at high temperature will cause lattice mismatch and lead to (0) Ga_ (0.9)) _ (0.5) In_ (0.5), the window of growth temperature is narrower. The conclusion of In Increasing the effective source concentration is an effective way to solve the problem of high temperature growth.