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研究了黄光OLED发光层间加入界面过渡层对OLED发光性能的影响。实验制备新型黄光OLED的发光层结构为CBP:R-4B/CBP:Girl:R-4B/CBP:GIrl,对比OLED的发光层结构为CBP:10%R-4B/CBP:10%GIrl、CBP:10%GIrl/CBP:10%GIrl10%R-4B/CBP:10%R-4B和CBP:10%GIrl/CBP:10%R-4B。结果表明,在对比器件的发光层界面间加入过渡层可显著提高器件的发光亮度和发光效率,新型器件在13V电压下、电流密度为40.29mA/cm2时,发光亮度和发光效率分别达到了11 120cd/m2与27.59cd/A,较未加入过渡层的器件分别提高了265%和56.18%。分析认为,过渡层的加入消除了由不同发光层间严格的界面效应而造成的界面缺陷,增加了载流子传输速率与激子的复合效率,从而提升了器件的发光性能。
The effect of interfacial transition layer on the luminescent properties of OLED was studied. The light-emitting layer structure of the novel yellow OLED is CBP: R-4B / CBP: Girl: R-4B / CBP: GIrl. CBP: 10% GIrl / CBP: 10% GIrl 10% R-4B / CBP: 10% R-4B and CBP: 10% GIrl / CBP: 10% R-4B. The results show that the luminescence intensity and the luminous efficiency of the device can be significantly improved by adding a transition layer between the interfaces of the light emitting layer of the comparative device. When the current density is 40.29mA / cm2 at 13V, the brightness and luminous efficiency of the new device reach 11 120cd / m2 and 27.59cd / A respectively, which are increased by 265% and 56.18% respectively compared with those without transition layer. The analysis shows that the addition of transition layer eliminates the interface defects caused by the strict interface effect between different light-emitting layers and increases the recombination efficiency of carrier transport rate and exciton, thus improving the light-emitting performance of the device.