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A series of 60 nm thick indium oxide thin-films, all amorphous as determined by x-ray diffraction, were found to have physical and electrical properties that depended on the temperature of deposition. The carrier mobility and film conductivity decreased with decreasing deposition temperature;the best electrical properties of high mobility and conductivity were observed at a deposition temperature just below the temperature at which crystalline films formed. The density of the film also decreased with deposition temperature from 7.2 g/cm3 at t50 1C to 5.3 g/cm3 at 100 1C.