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使用有限元方法对炉内的质量传递过程进行了全局数值模拟,研究了硅单晶Czochralski(Cz)法生长时氧传输的基本特性.结果表明:在小型硅Cz炉中,晶体中的氧浓度主要取决于熔体的流型和气相传质速率;安装在热区的气体导板可有效强化气相传质系数并改变熔体的流型,Marangoni效应可将自由界面处低氧浓度的熔体带至结晶界面,使晶体中氧浓度降低.
The numerical simulation of the mass transfer process in a furnace was carried out by using the finite element method, and the basic characteristics of oxygen transport during the growth of the silicon single crystal Czochralski (Cz) method were studied. The results show that the oxygen concentration in the small Cz Mainly depends on the melt flow pattern and the rate of gas mass transfer; installed in the hot zone of the gas guide plate can effectively enhance the gas mass transfer coefficient and change the melt flow pattern, Marangoni effect free zone can be low oxygen concentration of the melt zone To the crystalline interface, the oxygen concentration in the crystal is reduced.