采用等离子体增强化学气相沉积技术,以C2H2、H2和N2为反应气体,制备出碳纳米管薄膜,利用扫描电镜(SEM)对其进行表征。结果表明:催化剂刻蚀压强对碳纳米管薄膜的生长起着重要作用,获得定向性好、密度适中、杂质缺陷少的碳纳米管的最佳的刻蚀压强为200 Pa。 Carbon nanotubes films were prepared by plasma-enhanced chemical vapor deposition (CVD) using C2H2, H2 and N2 as reaction gases, and characterized by scanning electron microscopy (SEM). The results show that the etching pressure of catalyst plays an important role in the growth of carbon nanotube films. The optimal etching pressure of carbon nanotubes with good orientation, moderate density and few impurity defects is 200 Pa.