制备了一种新型抗辐照SOI隔离结构,它包含了薄SiO2/多晶硅/SiO2多层膜.利用这种结构制备的SOI器件在经受3×105rad(Si)的辐照后亚阈值特性未发生明显变化,漏电流也无增加,说明其抗辐照性能优于传统的LOCOS隔离结构. A novel anti-radiation SOI isolation structure was fabricated, which consisted of a thin SiO2 / polycrystalline / SiO2 multilayer film. The SOI device prepared by this structure did not appear to have subthreshold characteristics after being irradiated with 3 × 105 rad (Si) Significant changes in the leakage current did not increase, indicating its anti-radiation performance is better than the traditional LOCOS isolation structure.