论文部分内容阅读
In this work,the resistive switching behaviors of ferroelectrictric BaTiO3/La0.67Sr0.33MnO3heterostructures deposited by pulsed laser deposition are investigated.The BaTiO3films show both well-established P–E hysteresis loops,and asymmetric reversible diode-like resistive switching behaviors,involving no forming process.It is found that both the ON/OFF ratio and the stability of resistive switching are substantially dependent on operation voltage(Vmax).At a Vmaxof15 V,a large ON/OFF resistance ratio above 1000 is obtained at a Vmaxof 15 V,which is able to maintain stability up to70-switching cycles.The above resistive switching behaviors can be understood by modulating interface Schottky barriers as demonstrated by I–V curve fitting.
In this work, the resistive switching behaviors of ferroelectrictric BaTiO3 / La0.67Sr0.33MnO3heterostructures deposited by pulsed laser deposition are investigated. BaTiO3films show both well-established P-Ehysteresis loops, and asymmetric reversible diode-like resistive switching behaviors, involving no forming process. It is found that both of the ON / OFF ratio and the stability of resistive switching are substantially dependent on operation voltage (Vmax) .At a Vmaxof15 V, a large ON / OFF resistance ratio above 1000 is obtained at a Vmaxof 15 V , which is able to maintain stability up to 70-switching cycles. The above resistive switching behaviors can be understood by modulating interface Schottky barriers as demonstrated by I-V curve fitting.