论文部分内容阅读
利用高性能阴极荧光(CL)联合分析系统对几类典型的III族氮化物材料进行测试分析.在光谱研究中,利用CL紫外可见光谱系统,对c面蓝宝石衬底上生长的AlxGa1-xN薄膜进行阴极荧光单色谱测试分析,揭示了CL的激发强度与发光带之间的变化关系.进一步研究了掺Mg的Al0.5Ga0.5N薄膜的带边和杂质能级发光机理.利用CL近红外光谱系统对InN薄膜的阴极发光特性进行了研究,验证了InN实际光学带边Eg在0.77eV附近.利用微区分析(CLmapping)系统,可在紫外波段确切地给出材料不同波长的荧光发光区这一特点,对HVPE生长的自支撑GaN衬底进行了SEM和CL微区的对比分析,研究了GaN的位错类型和分布.
Several types of typical Group III nitride materials were tested and analyzed by a high-performance cathodoluminescence (CL) combined analysis system.Using CL ultraviolet visible spectroscopy system, the AlxGa1-xN films grown on c-plane sapphire substrates The results showed that the excitation intensity of CL was related to the change of emission band.The mechanism of edge banding and impurity level emission of Mg-doped Al0.5Ga0.5N thin film was further studied by using CL near-infrared spectroscopy The system studies the cathode luminescence properties of InN thin films and verifies that the actual optical edge Eg of InN is near 0.77eV.Using the CLmapping system, the fluorescence luminescence region with different wavelength of the material can be given exactly in the ultraviolet region A feature comparison of SEM and CL domains of self-supporting GaN substrates grown by HVPE was carried out. The dislocation types and distribution of GaN were investigated.