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VO_2作为相变材料在激光防护领域有着广阔的应用前景,为了提高透过率,采用在红外波段透过率为70%的 ZnSe 做基片,用磁控溅射法制备了 VO_2薄膜.对不同条件下制备的 VO_2薄膜用 X 射线电子能谱仪(XPS)测试,并通过拟合来得到 VO,V_2O_3,VO_2和 V_2O_5在薄膜中所占的比例。为提高4价钒的含量对薄膜进行了退火处理,根据薄膜中的钒氧的比例,采用了充氧加热退火,退火时间4h,退火温度450℃,退火真空度2.5×10~(-2)Pa,氧气流量6.5 sccm。4价钒含量提高到了接近60%,分析了退火对氧化钒薄膜中4价钒含量的影响。
VO2 as a phase change material in the field of laser protection has broad application prospects, in order to improve the transmittance, the use of 70% in the infrared band transmittance of ZnSe substrate prepared by magnetron sputtering VO_2 film. The VO_2 thin films prepared under conditions were tested by X-ray photoelectron spectroscopy (XPS), and the proportion of VO, V 2 O 3, VO 2 and V 2 O 5 in the films was obtained by fitting. In order to increase the content of vanadium 4, the film was annealed. According to the ratio of vanadia in the film, oxygenation heating annealing was used. The annealing time was 4h, the annealing temperature was 450 ℃, the annealing degree of vacuum was 2.5 × 10 ~ (-2) Pa, oxygen flow 6.5 sccm. The tetravalent vanadium content increased to almost 60%. The effect of annealing on the vanadium content in the vanadium oxide film was analyzed.