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编制了MESFET通用二维分析程序.通过对一个GaAs MESFET进行二维数值分析,得到了典型偏置条件下,沟道内各点的静电电位和自由电了浓度,计算了某些重要的器件参数.解释了短栅器件收漏电流泡和机理.计算结果与国外文献中有关报道相符.
MESFET generalized two-dimensional analysis program was prepared.The two-dimensional numerical analysis of a GaAs MESFET obtained the electrostatic potential and free-radical concentration of each point in the channel under typical bias conditions, and calculated some important device parameters. The short bubble gate leakage current bubble and mechanism are explained. The calculation results are consistent with the reports in foreign literature.