采用真空热蒸镀方法,制备了四种Delta掺杂结构OLED器件,其结构为:ITO/m-MTDATA(50nm)/LiF(xnm)/NPB(10nm)/Alq(5nm)/C545T(0.05nm)/Alq(55nm)/LiF(1nm)/Al,都获得了性能稳定的绿色OLED器件。从实验结果分析可知:绿色OLED器件的电流-电压(I-V)特性曲线、亮度-电压(L-V)曲线、亮度-电流(L-I)曲线及效率等光电性能随着LiF厚度的变化而随之改变。从其中总结规律,对OLED器件制作工艺有一定的指导作用。 Four types of Delta-doped OLEDs were fabricated by vacuum thermal evaporation. The structures were as follows: ITO / m-MTDATA (50nm) / LiF (xnm) / NPB (10nm) / Alq (5nm) / C545T ) / Alq (55nm) / LiF (1nm) / Al, a stable green OLED device was obtained. From the experimental results, it can be seen that the current-voltage (I-V) curve, L-V curve, L-I curve and efficiency of green OLED devices change with the thickness of LiF. From the summary of the law, the OLED device manufacturing process has a guiding role.