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本文探讨用二次离子质谱法(SIMS)研究离子注入层的纵向浓度分布,同时将 SIMS 与其他近代分析技术进行比较。用 SIMS 分析的薄层厚度可由几个原子层到几个微米。在最佳条件下的检测极限为10~(14)原子·厘米~(-3)(硅中硼)和10~(19)原子·厘米~(-3)(硅中氮)。本文还讨论了确定注入分布的影响因素,并且叙述了使这种影响降到最低的测试方法。
This article explores the longitudinal concentration distribution of ion implanted layers by SIMS and compares SIMS with other modern analytical techniques. The thickness of the thin layer analyzed by SIMS can vary from several atomic layers to several microns. Under the optimum conditions, the detection limit is 10-14 atoms cm -3 boron in silicon and 10-19 atoms cm -3 nitrogen in silicon. This article also discusses the factors that determine the injection profile and describes the test method to minimize this effect.