石墨烯的转移过程决定着石墨烯的品质,进而对石墨烯基器件的性能有重要的影响。针对化学气相沉积(CVD)法生长的石墨烯在湿法转移过程中存在的问题,在常规湿法转移的基础上进行了优化研究。实验结果表明:基体背面石墨烯的刻蚀工艺可以有效解决铜箔残留问题;采用二次涂胶工艺可以大幅降低石墨烯的裂痕破洞密度;超声波处理有效提升了石墨烯表面残胶的去除效率。优化后的转移工艺可以明显降低石墨烯产品中的杂质数量和缺陷密度,提升石墨烯的表面洁净度,显著地提高石墨烯质量。 The transfer of graphene determines the quality of graphene, which in turn has a significant impact on the performance of graphene-based devices. The problems existing in the wet transfer process of graphene grown by chemical vapor deposition (CVD) method are optimized based on conventional wet transfer. The experimental results show that the etching process of graphene on the backside of the substrate can effectively solve the problem of copper foil residue; the secondary coating process can greatly reduce the density of cracks in graphene; the ultrasonic treatment effectively improves the removal efficiency of residual glue on the surface of graphene . The optimized transfer process can significantly reduce the amount of impurities and defect density in graphene products, improve the surface cleanliness of graphene, and significantly improve the quality of graphene.