根据BaF2晶体闪烁光快、慢成分波段的不同,设计并制备了用于抑制该晶体闪烁光慢成分的 Al2O3/MgF2/Al/MgF2…光子带隙膜系。实验结果显示:加载光子带隙膜系的BaF2晶体,其闪烁光快/慢成分 比提高80倍以上;经剂量为1×105Gy的60Coγ射线辐照后,其透射光谱、发射光谱和发光衰减时间谱没有明 显的变化,这表明由光子带隙膜系与BaF2晶体所构成的快闪烁器件不仅可有效避免慢成分的干扰,而且还具 有很强的抗γ辐射性能。 According to the fast and slow wavelength band of BaF2 crystals, a slow-component Al2O3 / MgF2 / Al / MgF2 ... photonic band gap film system was designed and prepared. The experimental results show that the BaF2 crystals loaded photonic bandgap film have an increase of more than 80 times the fast / slow scintillation ratio. After 60Co γ-ray irradiation with a dose of 1 × 105Gy, the transmission spectra, emission spectra and luminescence decay time There is no obvious change in the spectra, which indicates that the fast scintillation device composed of photonic band gap film and BaF2 crystal can not only effectively avoid the slow component interference, but also has strong anti-gamma radiation performance.