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基于现有仿真及工艺平台,设计一款3 300V/50A场截止型绝缘栅双极晶体管器件(FS-IGBT),元胞采用场截止型平面栅结构,元胞注入采用自对准工艺,背面P型集电极采用透明集电极技术,降低导通状态的饱和压降。采用二维数值仿真主要研究了FS结构以及P~+集电极掺杂参数对器件性能的影响,通过参数拉偏仿真,重点分析了FS层和集电极P区注入剂量对器件参数的影响,确认了最佳的工艺窗口条件。通过合作方工艺平台对最终的结构进行了加工,最终测试结果显示IGBT器件通态压降为2.8V,击穿电压大于4 250V,关断损耗37mJ,开通损耗50mJ。
Based on the existing simulation and process platform, a 3 300V / 50A field-stop insulated gate bipolar transistor device (FS-IGBT) is designed. The cell adopts a field stop type planar gate structure, the cell injection uses a self-aligned process, P-type collector using transparent collector technology to reduce the saturation voltage drop on-state. The effects of FS structure and P ~ + collector doping parameters on the performance of the device are mainly investigated by two-dimensional numerical simulation. Through the simulation of parameters pull-off, the effects of implantation dose of FS layer and collector P on the device parameters are analyzed. The best process window conditions. The final structure was processed through the cooperation technology platform. The final test results showed that the on-state voltage drop of IGBT was 2.8V, the breakdown voltage was more than 4 250V, the turn-off loss was 37mJ, and the turn-on loss was 50mJ.