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本文利用金属有机物化学气相沉积(MOCVD)方法系统地研究了p-AlGaN层掺杂机理及优化设计生长.明确了生长温度、压力及TMAl的流量对AlGaN层Al组分的影响关系,并给出了各自不同的机理与作用.研究发现,Al组分介于10%—30%之间能够很好地将电子限定在量子阱区域并保持高的材料晶体质量.发展了一种新的生长技术来克服p-AlGaN层掺入效率低下和空穴注入不足的问题.优化条件下生长的p型AlGaN电子阻挡层很大地提升了InGaN/GaN基LED的输出光功率.
This paper systematically studied the doping mechanism and optimized design growth of p-AlGaN layer by using MOCVD method.The effect of growth temperature, pressure and TMAl flow rate on the Al composition of AlGaN layer was given Different mechanism and function were studied.The study found that between 10% -30% of Al composition can well confine electrons in the quantum well region and maintain a high crystal quality of the material.A new growth technology was developed To overcome the problem of low incorporation efficiency of the p-AlGaN layer and insufficient hole injection.The p-type AlGaN electron blocking layer grown under optimized conditions greatly enhances the output optical power of the InGaN / GaN-based LED.