为了在C/C材料表面可靠地制备SiC抗氧化涂层 ,针对CVD工艺特点 ,采用正交设计方法对MTS +H2 体系制备SiC工艺过程进行了全面系统的研究 ,在对沉积过程现象进行观察分析的基础上 ,计算了 6种工艺因素对SiC -CVD过程影响的方差 ,对各自影响的显著性进行了分析 ,并讨论了所属的 2 1种工艺条件对沉积结果的影响。 In order to reliably prepare the SiC anti-oxidation coating on the surface of C / C material, aiming at the characteristics of CVD process, the orthogonal design method was used to comprehensively study the process of SiC preparation in MTS + H2 system. The phenomenon of deposition process was observed and analyzed The variance of the influence of six process factors on the SiC-CVD process was calculated. The significance of each influence was analyzed. The influence of the 21 process conditions on the deposition results was also discussed.